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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION *With TO-220 package *Low collector saturation voltage. *Short switching time. *Complement to type 2SC3255 APPLICATIONS *Various inductance lamp drivers for electrical equipment. *Inverters, converters *Power amplifier *High-speed switching PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION 2SA1291 Fig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS (TC=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -80 -60 -5 -10 -12 40 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) ICBO IEBO hFE fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ,IE=0 IC=-1mA ,IB=0 B 2SA1291 MIN -80 -60 -5 TYP. MAX UNIT V V V IE=-1mA ,IC=0 IC=-5A; IB=-0.25A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-1A ; VCE=-5V -0.4 -100 -100 70 100 280 V A A MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=5A IB1=- IB2=0.25A VCC=20V;RL=6.67 0.1 0.5 0.1 s s s hFE Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1291 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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